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Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
150 C
50
10
V GS = 15.0V
10.0V
8.0V
7.0V
6.0V
5.5V
100
*Notes:
1. V DS = 20V
2. 250 μ s Pulse Test
o
5.0V
25 C
-55 C
1
4.5V
*Notes:
1. 250 μ s Pulse Test
10
o
o
2. T C = 25 C
0.3
0.1
1
o
10
1
2
3
4 5 6 7
8
V DS , Drain to Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.5
V GS , Gate to Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
150 C
25 C
0.4
o
o
0.3
0.2
V GS = 10V
V GS = 20V
10
*Notes:
*Note: T C = 25 C
0.1
0
10
20 30
40
o
50
1
0.2
1. V GS = 0V
2. 250 μ s Pulse Test
0.4 0.6 0.8 1.0 1.2
1.4
I D , Drain Current [A]
Figure 5. Capacitance Characteristics
10000
C iss
V SD , Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
1000
8
V DS = 120V
V DS = 300V
V DS = 480V
100
*Note:
C oss
6
4
10
1. V GS = 0V
2. f = 1MHz
Ciss = Cgs + Cgd (Cds = shorted)
C rss
2
1
0.5
0.1
Coss = Cds + Cgd
Crss = Cgd
1 10 100
600
0
0
*Note: I D = 10A
20 40
60
V DS , Drain to Source Voltage [V]
Q g , Total Gate Charge [nC]
?2012 Fairchild Semiconductor Corporation
FCP190N60 / FCPF190N60 Rev. C16
3
www.fairchildsemi.com
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